At Hot Chips 2026, Samsung unveiled a 16 GB LPDDR5X memory package that delivers 614 GB/s of internal bandwidth to integrated compute units, an eightfold increase over the external bandwidth measured at 76.8 GB/s, according to Samsung. The package places processing units adjacent to DRAM banks within the memory die, a design known as processing‑in‑memory (PIM). DRAM banks provide high internal throughput, but the narrow external interface limits the amount of data that can be transferred to external processors. Samsung’s design incorporates six PIM blocks per die, each containing MAC arrays and an ALU, and uses a JEDEC‑standard 561‑ball package that maintains the same physical footprint as conventional LPDDR5X modules. The architecture processes data through four stages: activation write, weight load, vector store, and readback, with the host issuing commands and handling readback through single‑bank mode. In a test running Llama 3.1 8B with a 320‑token context using SINT8 activations, SINT4 weights and SINT32 output, the PIM‑enabled LPDDR5X achieved a throughput of 81.3 tokens per second, compared with 27 tokens per second for standard LPDDR5X, a 3.01× improvement (Samsung, 2026). Samsung also reports that the package can deliver up to 1.2 TFLOPS for FP8 precision and 2.4 TOPS for SINT4 weights, based on fifteen precision modes defined in a configuration register (Samsung, 2026). Software support remains limited, as llama.cpp, vLLM and similar runtimes do not include a PIM backend, and Samsung provides only a simulator, a datasheet and an SDK for developers. Three technical barriers have been identified: (1) k‑quantization formats such as Q4_K_M are not mapped to the hardware’s native quantized operations and would require re‑quantization of model files; (2) the memory layout must be contiguous and aligned to the memory banks, conflicting with existing mmap‑based page allocation mechanisms; and (3) the design optimizes for GEMV‑type operations, which suit batch‑size‑1 decoding but limit efficiency for broader GEMM workloads such as batched inference or mixture‑of‑experts routing. Because the external memory interface remains unchanged, the package does not increase the maximum bus width or channel count, but it enables higher effective bandwidth for memory‑bound workloads, potentially reducing power and cost compared with adding more HBM channels. Samsung expects the product to ship in 2026 while JEDEC’s separate LPDDR6 PIM standard is still under development, with no announced release date. The announcement demonstrates a pathway to higher inference bandwidth without expanding external memory interfaces, but broader adoption will depend on software ecosystem changes that enable PIM‑aware runtimes and address current limitations in quantization mapping, memory allocation and operation type support.