NVIDIA is pursuing a standardized manufacturing approach for the base die of its custom high-bandwidth memory (HBM) solution, targeting the 3nm node. The initiative requires Samsung, Micron and SK hynix to produce the base die using TSMC's 3nm process, while the core die will rely on Micron's sixth-generation DRAM process, referred to as 1c. This shift aims to ensure consistent performance and reduce verification overhead across suppliers. NVIDIA has indicated that its in-house HBM implementation could deliver up to 30 percent higher memory bandwidth and consume up to 15 percent less power compared to standard HBM4E. To achieve these gains, the company is coordinating with multiple memory manufacturers to adopt a unified production flow, minimizing the need for individual sample validation. Samsung has confirmed its participation in the effort, marking a departure from its traditional turnkey model. The company is also assessing its own foundry capabilities in case demand outpaces TSMC's capacity. Industry analysts note that this collaboration may help stabilize supply chains and support broader AI hardware scalability.