Samsung has signed a memorandum of understanding with Broadcom to develop AI infrastructure valued at up to $200 billion over the next five years, using its 2nm process and HBM4 memory. The agreement marks the latest effort by Samsung's foundry division to expand beyond its core chip manufacturing into integrated memory solutions, positioning it against TSMC, which dominates the global semiconductor market with its pure‑play foundry model. Under the terms, Broadcom will use Samsung’s HBM4 memory for its AI accelerators and ASIC chips, while Samsung will apply its 2nm GAA node to produce high‑speed data communication components. The partnership is expected to shorten design and development lead times by handling multiple stages of production in‑house, from layout to packaging. Samsung’s integrated DRAM and storage offerings give it flexibility that TSMC would need to obtain from external suppliers, potentially reducing supply‑chain bottlenecks. The deal underscores Samsung’s ambition to broaden its foundry services and could influence the trajectory of AI chip design, though the final value of the agreement and its impact on market competition remain subject to future announcements.