Intel's 18A-P process, used in Diamond Rapids Xeon and Nova Lake Core CPUs, achieved a 30% increase in operating frequency at 0.5V on production silicon. The 18A-P node adds gate‑all‑around transistors with backside power delivery, extra metal layers, and Power Boost, enabling higher frequencies and lower power compared with the previous 18A node. Intel said the design provides more than 9% performance improvement at the same power or 18% lower power at the same performance relative to 18A. The node incorporates strain engineering, a RibbonFET portfolio, and a dual‑contact Power Boost architecture that reduces resistance and raises drive current. Two additional coarse metal layers were added to lower interconnect resistance, delivering about 3% higher frequency at 1.1V and 2% at 0.65V while reducing power consumption by 2%. Backside power delivery routes current from the wafer's rear, reducing voltage droop and IR loss. Intel also noted a 50% increase in bond‑stack thermal conductance, resulting in 20‑40% lower thermal resistance for the overall stack. The company said the 30% frequency gain was measured across the operating‑voltage range using cores that matched the class of FinFET equivalents, isolating process contribution from architectural changes. Intel expects the first products using 18A‑P, including Diamond Rapids and Nova Lake, to launch next year. The roadmap also includes ruthenium interconnect with air gaps, vertical logic stacking, and advanced packaging techniques aimed at continuing per‑core performance growth. Intel said the 18A‑P node marks the first step in a multi‑generational roadmap for per‑core performance leadership, with further gains expected from upcoming process iterations and design innovations.